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NTR4170N Power MOSFET
30 V, 3.2 A, Single N-Channel, SOT-23
Features
* * * * *
Low RDS(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb-Free Device
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V(BR)DSS RDS(on) MAX 55 mW @ 10 V 30 V 70 mW @ 4.5 V 110 mW @ 2.5 V ID MAX 3.2 A 2.8 A 2.0 A
Applications
* Power Converters for Portables * Battery Management * Load/Power Switch
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) t 30 s t 10 s Power Dissipation (Note 1) Steady State t 10 s Pulsed Drain Current tp = 10 ms IDM TJ, Tstg IS TL TA = 25C TA = 85C TA = 25C TA = 25C PD 1.25 8.0 -55 to 150 0.78 260 A C A C ID Symbol VDSS VGS Value 30 12 3.2 2.3 4.0 0.78 W A Unit V V
SIMPLIFIED SCHEMATIC - N-CHANNEL
D
G
S
MARKING DIAGRAM/ PIN ASSIGNMENT
3 1 2 SOT-23 CASE 318 STYLE 21 1 1 Gate 2 Source 3 Drain TREMG G
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
TRE = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 30 s Junction-to-Ambient - t < 10 s (Note 1) Symbol RqJA RqJA RqJA Max 260 153 100 Unit C/W
ORDERING INFORMATION
Device NTR4170NT1G NTR4170NT3G Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 10000/Tape & Reel
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
June, 2008 - Rev. 0
1
Publication Order Number: NTR4170N/D
NTR4170N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH) /TJ RDS(on) VGS = 10 V, ID = 3.2 A VGS = 4.5 V, ID = 2.8 A VGS = 2.5 V, ID = 2.0 A Forward Transconductance gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, IS = 1.0 A, dISD/dt = 100 A/ms VGS = 0 V, IS = 1.0 A, TJ = 25C VGS = 4.5 V, VDD = 15 V, ID = 3.2 A, RG = 6.2 W VGS = 4.5 V, VDS = 15 V, ID = 3.2 A VGS = 0 V, f = 1.0 MHz, VDS = 15 V VDS = 5.0 V, ID = 3.2 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance 432 53.6 37.1 4.76 0.3 1.0 1.4 3.8 W ns nC pF VGS = VDS, ID = 250 mA 0.6 1.0 3.3 45 50 64 8.0 55 70 110 S 1.4 V mV/C mW V(BR)DSS V(BR)DSS /TJ IDSS IGSS VGS = 0 V, ID = 250 mA ID = 250 mA, Reference to 25C VGS = 0 V, VDS = 24 V, TJ = 25C VGS = 0 V, VDS = 24 V, TJ = 125C VDS = 0 V, VGS = "12 V 30 26.4 1.0 5.0 $100 V mV/C mA nA Symbol Test Conditions Min Typ Max Units
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 6.4 9.9 15.1 3.5
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 0.75 8.0 5.1 2.9 2.9 nC 1.0 V ns
2. Surface-mounted on FR4 board using 1 in sq pad size (CU area = 1.127 in sq [2 oz] including traces). 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTR4170N
TYPICAL CHARACTERISTICS
3.5 3.0 ID, DRAIN CURRENT (A) 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 1.6 V 1.5 V VGS = 1.4 V 2.5 3.0 10 V 2.5 V 7.0 4.5 V 2.0 V TJ = 25C 1.8 V ID, DRAIN CURRENT (A) 6.0 5.0 4.0 3.0 2.0 1.0 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 TJ = 125C TJ = 25C TJ = -55C 2.0 2.2 2.4 VDS 10 V
1.7 V
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.12 0.10 0.08 0.06 0.04 0.02 ID = 3.2 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1.0
Figure 2. Transfer Characteristics
TJ = 25C VGS = 2.5 V VGS = 4.5 V VGS = 10 V
1.0 2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Gate Voltage
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1.0 0.8 0.6 -50 10 ID = 3.2 A VGS = 10 V 10,000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V IDSS, LEAKAGE (nA)
1000
TJ = 150C
100
TJ = 125C
-25
0
25
50
75
100
125
150
5.0
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTR4170N
TYPICAL CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (V) 700 600 C, CAPACITANCE (pF) 500 400 300 200 100 0 Crss 0 4.0 8.0 Coss 12 16 20 24 28 30 Ciss VGS = 0 V TJ = 25C 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1.0 2.0 3.0 ID = 3.2 A TJ = 25C 4.0 5.0 Qgs Qgd QT
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (A) VDD = 15 V ID = 3.2 A VGS = 4.5 V t, TIME (ns) 100 td(off) tf tr 10 td(on)
Figure 8. Gate-to-Source Voltage vs. Total Charge
3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS = 0 V TJ = 25C
1.0
1.0
10 RG, GATE RESISTANCE (W)
100
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTR4170N
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
E
1 2
HE c e b q 0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTR4170N/D

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